Efficient Power Conversion (EPC) has announced the conclusion of the Presidential review period for the US International ...

The simultaneous growth of large quantities of GaN crystals achieved using the ammonothermal method can also reduce ...

ANDOVER, MA, UNITED STATES, December 23, 2024 /EINPresswire.com/ -- and El Segundo, CA - EPC Space, a leader in radiation-hardened (Rad Hard) GaN-on-silicon ...

EPC Space is the first company to achieve this certification for Gallium Nitride (GaN) High-Electron Mobility Transistors (HEMT). Looking forward, EPC Space plans to roll out 18 JANS-certified Rad ...

EPC Space's achievement in obtaining this certification for Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT) is a world first. Bel Lazar, CEO of EPC Space, commented, "Securing the JANS ...

CA - EPC Space , a leader in radiation-hardened (Rad Hard ) GaN-on-silicon transistors and ICs, is pleased to announce that both its Andover, Massachusetts facility and its wafer fabrication ...

California-based EPC on Thursday said the ITC decision was "the first successfully litigated US patent dispute involving GaN-based wide bandgap semiconductors". The firm said it expects to open ...

Advanced GaN Technology: Powered by 100 V-rated EPC2306 ... cost-effective solar energy systems," said Alex Lidow, CEO of EPC. For more information about the EPC9178, visit https://epc-co.com ...