A flyback with a GaN switch offers higher efficiency across all metrics versus silicon—and it’s simpler to design. Enter the ...
These devices switch faster than silicon MOSFETs ... Texas Instruments’ solution—TI Direct-Drive—directly drives the GaN HEMT FET, whereby the silicon switch is employed as an enable ...
GaN power devices, which are already utilised in consumer ... of TSMC’s 650V GaN high-electron mobility transistors (HEMT) for ROHM’s EcoGaN series. ROHM senior managing executive officer ...
The Uno series has another trick up its sleeve though. Unlike Ugreen’s Nexode GaN chargers which have a retractable AC plug ...
Toyoda Gosei’s (TOKYO:7282) technology to enhance GaN substrates has been verified to improve power device performance. An ...
GaN power device fabrication is similar to that of the RF GaN HEMT, which has been available as a product for several years from volume fabs/foundries. Thus, a big advantage of GaN power devices is ...
What is claimed to be the industry’s first 1,700V GaN transistor has been announced. Steve Bush interviews Andy Smith, ...
Teledyne HiRel Semiconductors announces the availability of its Gallium Nitride (GaN) high-power RF switch, model TDSW84230EP ...
EPC Space, a specialist in rad-hard GaN-on-silicon transistors and ICs, has announced that both its Andover, Massachusetts facility and its wafer fabrication facility in Taiwan have been certified ...
The collaboration combines Rohm's expertise in device development with ... In 2023, Rohm incorporated TSMC's 650V GaN high-electron mobility transistors (HEMTs) into its EcoGaN™ series, which ...